SUM110N06-06 Просмотр технического описания (PDF) - Vishay Semiconductors

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производитель

SUM110N06-06

N-Channel 60-V (D-S), 175 °C MOSFET

Vishay Semiconductors 

SUM110N06-06

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2.5

100

VGS = 10 V

ID = 30 A

2.0

1.5

TJ = 150 °C

10

TJ = 25 °C

1.0

0.5

0.0

- 50 - 25 0

25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

On-Resistance vs. Junction Temperature

1000

1

0

0.3

0.6

0.9

1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

80

100

IAV (A) at TA = 25 °C

10

1 IAV (A) at TA = 150 °C

76

ID = 10 mA

72

68

64

0.1

0.00001 0.0001 0.001 0.01

0.1

1

tin (s)

Avalanche Current vs. Time

60

- 50 - 25 0

25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

Drain Source Breakdown

vs. Junction Temperature

www.vishay.com

4

Document Number: 72082

S-80108-Rev. B, 21-Jan-08

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