TA8409 Просмотр технического описания (PDF) - Toshiba
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TA8409 Datasheet PDF : 12 Pages
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Maximum Ratings (Ta = 25°C)
TA8409S/SG, F/FG
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
25
V
Motor drive voltage
Reference voltage
VS
25
V
Vref
25
V
PEAK
IO (PEAK)
1.0
Output current
A
AVE.
IO (AVE.)
0.4
TA8409F/FG
Power dissipation
PD
TA8409S/SG
0.735 (Note)
W
0.95
Operating temperature
Storage temperature
Topr
−30 to 75
°C
Tstg
−55 to 150
°C
Note: This rating is obtained when the device is mounted on a 50 × 50 × 1.6 mm PCB with a Cu area of 30% or
more.
Electrical Characteristics (Ta = 25°C, VCC = 12 V, VS = 18 V)
Characteristics
Supply current
Input operating
voltage
1 (High)
2 (Low)
Input current
Input hysteresis voltage
Upper side
Saturation voltage
Lower side
Upper side
Lower side
Output voltage
Output transistor
leakage current
Upper side
Lower side
Upper side
Diode forward voltage
Lower side
Reference current
Symbol
Test
Circuit
Test Condition
Min Typ. Max Unit
ICC1
ICC2
ICC3
VIN 1
VIN 2
IIN
∆VT
VSAT U−1
VSAT L−1
VSAT U−2
VSAT L−2
VSAT U−1’
VSAT U−2’
ILU
ILL
VF U−1
VF L−1
Iref
1 Output OFF, CW/CCW mode
― 10.0 15.0 mA
1 Output OFF, STOP mode
―
0
50
µA
1 Output OFF, BREAK mode
―
6.5 10.0 mA
2 Tj = 25°C IN1, 2
2 Tj = 25°C IN1, 2
2 Sink mode, VIN = 3.5 V
2
―
3.5
―
5.5
V
GND ―
0.8
―
3
10
µA
―
0.7
―
V
3
Vref = VS, VOUT−VS measure
IO = 0.2 A, CW/CCW mode
―
0.9
1.2
3
Vref = VS, VOUT−GND measure
IO = 0.2 A, CW/CCW mode
―
0.8
1.2
3
Vref = VS, VOUT−VS measure
IO = 0.4 A, CW/CCW mode
―
1.0 1.35
V
Vref = VS, VOUT−GND
3 measure
IO = 0.4 A, CW/CCW mode
―
0.9 1.35
Vref = 10 V, VOUT−GND
3 measure
IO = 0.2 A
Vref = 10 V, VOUT−GND
3 measure
IO = 0.4 A
4 VL = 25 V
4 VL = 25 V
10.4 11.2 12.2
V
― 10.9 ―
―
―
50
µA
―
―
50
5 IF = 0.4 A
5 IF = 0.4 A
―
1.5
―
V
―
0.9
―
2 Vref = 10 V, source mode
―
20
40
µA
4
2003-08-12
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