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TGS2351

DC – 6 GHz High Power SPDT Switch

TriQuint Semiconductor 

TGS2351

DC – 6 GHz High Power SPDT Switch

Bond Pad Description

23

4

1

76

5

Bond Pad

1

2, 7

3, 6

4

5

Symbol

RF In

Vc2

Vc1

RF Out1

RF Out2

Description

Input, matched to 50 ohms, DC coupled

Control voltage #2; can be biased from either side (bond pad 2 or bond pad 7), and non-

biased bond pad can be left opened; see Application Circuit on page 6 as an example

Control voltage #1; can be biased from either side (bond pad 3 or bond pad 6), and non-

biased bond pad can be left opened; see Application Circuit on page 6 as an example

Output #1, matched to 50 ohms, DC coupled

Output #2, matched to 50 ohms, DC coupled

Data Sheet: Rev B 06/20/12

© 2012 TriQuint Semiconductor, Inc.

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Disclaimer: Subject to change without notice

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