TN6719A Просмотр технического описания (PDF) - Fairchild Semiconductor
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TN6719A Datasheet PDF : 2 Pages
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NPN High Voltage Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
V(BR)EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC = 1.0 mA, IB = 0
IC = 100 µA, IE = 0
IE = 1.0 mA, IC = 0
VCB = 200 V, IE = 0
VEB = 6.0 V, IC = 0
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
VCE = 10 V, IC = 1.0 mA
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 30 mA
IC = 30 mA, IB = 3.0 mA
VCE = 10 V, IC = 30 mA
SMALL SIGNAL CHARACTERISTICS
Ccb
Collector-Base Capacitance
hfe
Small-Signal Current Gain
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
VCB = 20 V, f = 1.0 MHz
IC = 15 mA, VCE = 100 V,
f = 20 MHz
300
V
300
V
7.0
V
100
nA
100
nA
25
40
40
200
0.75
V
0.85
V
3.5
pF
1.5
15
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