Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown VGS = 0 V, ID = 250 µA
Q1
Voltage
VGS = 0 V, ID = –250 µA
Q2
∆BVDSS
Breakdown Voltage
ID = 250 µA, Referenced to 25°C
Q1
∆TJ
Temperature Coefficient
ID = –250 µA, Referenced to 25°C
Q2
IDSS
Zero Gate Voltage Drain
VDS = 16 V, VGS = 0 V
Q1
Current
VDS = –16 V, VGS = 0 V
Q2
IGSS
Gate-Body Leakage
VGS = +12 V, VDS = 0 V
Q1
VGS = +12 V, VDS = 0 V
Q2
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
Q1
VDS = VGS, ID = –250 µA
Q2
∆VGS(th)
Gate Threshold Voltage
ID = 250 µA, Referenced to 25°C
Q1
∆TJ
Temperature Coefficient
ID = –250 µA, Referenced to 25°C
Q2
RDS(on)
Static Drain-Source
On-Resistance
VGS = 4.5 V, ID = 5.5 A
Q1
VGS = 2.5 V, ID = 4.2 A
VGS = 4.5 V, ID = 5.5 A, TJ = 125°C
VGS = –4.5 V, ID = –3.8 A
Q2
VGS = –2.5 V, ID = –3.0 A
VGS = –4.5 V, ID = –3.8 A, TJ = 125°C
ID(on)
On-State Drain Current
VGS = 4.5 V, VDS = 5 V
Q1
VGS = –4.5 V, VDS = –5 V
Q2
gFS
Forward Transconductance VDS = 5 V, ID = 5.5 A
Q1
VDS = –5 V, ID = –3.5 A
Q2
Dynamic Characteristics
Ciss
Input Capacitance
Q1:
Q1
VDS = 10 V, VGS = 0 V,
Q2
Coss
Output Capacitance
f = 1.0 MHz
Q1
Q2:
Q2
Crss
Reverse Transfer
VDS = –10 V, VGS = 0 V,
Q1
Capacitance
f = 1.0 MHz
Q2
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Q1:
Q1
VDD = 10 V, ID = 1 A,
Q2
VGS = 4.5 V, RGEN = 6 Ω
Q1
Q2:
Q2
VDD = –5 V, ID = –1 A,
Q1
VGS = –4.5V, RGEN = 6 Ω
Q2
Q1
Q2
Q1:
Q1
VDS = 10 V, ID = 5.5 A, VGS = 4.5 V Q2
Q1
Q2:
Q2
VDS = –5 V, ID = –3.8 A,VGS = –4.5 V Q1
Q2
20
–20
14
–16
V
mV/°C
1
µA
–1
+100 nA
+100
0.6 0.8 1.5 V
–0.6 –1.0 –1.5
–3.2
mV/°C
3.0
17 21 mΩ
24 35
23 34
36 43
56 70
49 69
30
A
–15
26
S
13.2
1082
pF
1030
277
pF
280
130
pF
120
8
20 ns
11 20
8
27 ns
18 32
24 38 ns
34 55
8
16 ns
34 55
12 17 nC
9.7 16
2
nC
2.2
3
nC
2.4
FDW2521C Rev D1(W)