TSV914ID Просмотр технического описания (PDF) - STMicroelectronics
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TSV914ID Datasheet PDF : 18 Pages
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TSV911-TSV912-TSV914
Electrical characteristics
3
Electrical characteristics
Table 3. Electrical characteristics at VCC = +2.5V
VDD = 0V, Vicm = VCC/2, Tamb = 25°C, R L connected to Vcc/2 (unless otherwise specified)
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
DC performance
Offset voltage
TSV91x
Vio
TSV91xA
DVio/DT Input offset voltage drift
Iio
Input offset current
(Vout = Vcc/2)
Iib
Input bias current
(Vout = Vcc/2)
CMR
Common Mode rejection
ratio 20 log (∆Vic/∆Vio)
Avd Large signal voltage gain
Vcc-
VOH
High level output voltage
VOL Low level output voltage
Isink
Iout
Isource
ICC
Supply current (per
operator)
AC performance
GBP Gain bandwidth product
Fu Unity gain frequency
φm Phase margin
Gm Gain margin
SR Slew rate
-
Tmin. < Top < Tmax.
-
-
Tmin. < Top < Tmax.
-
-
-
-
0V to 2.5V, Vout = 1.25V
58
RL= 10kΩ, Vout= 0.5V to 2V 80
RL = 10kΩ
RL = 600Ω
RL = 10kΩ
RL = 600Ω
-
Vo = 2.5V
18
Tmin. < Tamb < Tmax.
16
Vo = 0V
18
Tmin. < Tamb < Tmax.
16
No load, Vout=Vcc/2
-
Tmin. < Top < Tmax.
-
RL = 2kΩ, CL = 100pF,
f = 100kHz
-
RL = 2kΩ, CL = 100pF,
RL = 2kΩ, CL = 100pF
-
RL = 2kΩ, CL = 100pF
-
RL = 2kΩ, CL = 100pF, Av=1 -
0.1 4.5
- 7.5
mV
- 1.5
-
3
2
- µV/°C
1 10(1) pA
1 10(1) pA
75 -
dB
89 -
dB
15 40
45 150
mV
15 40
45 150
mV
32 -
-
-
mA
35 -
-
-
0.78 1.1
mA
- 1.1
8
-
MHz
7.2
MHz
45 - Degrees
8
-
dB
4.5 -
V/µs
5/18
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