DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

UPD4702G Просмотр технического описания (PDF) - NEC => Renesas Technology

Номер в каталоге
Компоненты Описание
производитель
UPD4702G Datasheet PDF : 16 Pages
First Prev 11 12 13 14 15 16
20PIN PLASTIC DIP (300 mil)
20
11
µPD4702
1
10
A
K
I
P
L
J
H
C
F
G
B
D
NM
NOTES
1) Each lead centerline is located within 0.25 mm (0.01 inch) of
its true position (T.P.) at maximum material condition.
2) ltem "K" to center of leads when formed parallel.
M
R
ITEM MILLIMETERS INCHES
A
25.40 MAX. 1.000 MAX.
B
1.27 MAX. 0.050 MAX.
C
2.54 (T.P.) 0.100 (T.P.)
D
0.50±0.10
0.020
+0.004
–0.005
F
1.1 MIN.
0.043 MIN.
G
3.5±0.3
0.138±0.012
H
0.51 MIN.
0.020 MIN.
I
4.31 MAX. 0.170 MAX.
J
5.08 MAX. 0.200 MAX.
K
7.62 (T.P.) 0.300 (T.P.)
L
6.4
0.252
M
0.25
+0.10
–0.05
0.010
+0.004
–0.003
N
0.25
0.01
P
0.9 MIN.
0.035 MIN.
R
0~15 °
0~15°
P20C-100-300A,C-1
11

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]