VN2460 Просмотр технического описания (PDF) - Supertex Inc
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VN2460 Datasheet PDF : 4 Pages
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Thermal Characteristics
Package
TO-243AA
ID (continuous)*
0.2A
ID (pulsed)
0.6A
Power Dissipation
@ TC = 25°C
1.6W†
TO-92
0.16A
0.5A
1W
* ID (continuous) is limited by max rated Tj.
† Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
θjc
°C/W
15
125
θja
°C/W
78 †
170
IDR*
0.2A
0.16A
VN2460
IDRM
0.6A
0.5A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
Parameter
Drain-to-Source
Breakdown Voltage
Min Typ Max Unit
Conditions
600
V
VGS = 0V, ID = 2.0mA
VGS(th)
Gate Threshold Voltage
1.5
∆VGS(th)
Change in VGS(th) with Temperature
IGSS
Gate Body Leakage
IDSS
Zero Gate Voltage Drain Current
V
VGS = VDS , ID = 2.0mA
-5.5 mV/°C VGS = VDS , ID = 2.0mA
100
nA
VGS = ±20V, VDS = 0V
10
µA
VGS = 0V, VDS = Max Rating
1
mA VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON)
ON-State Drain Current
0.25
RDS(ON)
Static Drain-to-Source
25
ON-State Resistance
20
∆RDS(ON)
Change in RDS(ON) with Temperature
1.7
GFS
Forward Transconductance
50
CISS
Input Capacitance
150
COSS
Common Source Output Capacitance
50
CRSS
Reverse Transfer Capacitance
25
td(ON)
Turn-ON Delay Time
10
tr
Rise Time
10
td(OFF)
Turn-OFF Delay Time
25
tf
Fall Time
20
VSD
Diode Forward Voltage Drop
1.5
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
Ω
%/°C
m
pF
ns
V
VGS = 10V, VDS = 25V
VGS = 4.5V, ID = 100mA
VGS = 10V, ID = 100mA
VGS = 10V, ID = 100mA
VDS = 25V, ID = 100mA
VGS = 0V, VDS = 25V
f = 1.0 MHz
VDD = 25V,
ID = 250mA,
RGEN = 25Ω
VGS = 0V, ISD = 400mA
Switching Waveforms and Test Circuit
10V
INPUT
0V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
2
PULSE
GENERATOR
Rgen
INPUT
VDD
RL
OUTPUT
D.U.T.
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