VRF157FL(2009) Просмотр технического описания (PDF) - Microsemi Corporation
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VRF157FL Datasheet PDF : 4 Pages
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Dynamic Characteristics
Symbol
Parameter
Test Conditions
CISS
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 50V
f = 1MHz
Functional Characteristics
Symbol
Parameter
GPS
f = 30MHz, VDD = 50V, IDQ = 800mA, Pout = 600W
ηD
f = 30MHz, VDD = 50V, IDQ = 800mA, Pout = 600WPEP
IMD(d3)
f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 800mA, Pout = 600WPEP 1
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
VRF157FL
Min
Typ
Max
Unit
1580
810
pF
65
Min
Typ
Max Unit
17
21
dB
45
%
-25
dBc
Typical Performance Curves
45
5.5V
40
35
30
4.5V
25
20
3.5V
15
10
2.5V
5
1.5V
.5V
00
2
4
6
8
10
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1, Output Characteristics
1.0E−8
1.0E−9
Ciss
Coss
1.0E−10
Crss
1.0E−11
0.1
25
50
75
100
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3, Capacitance vs Drain-to-Source Voltage
100
90
80
70
60
250μs PULSE
TEST<0.5 % DUTY
CYCLE
TJ= -55°C
TJ= 25°C
50
40
30
20
10
TJ= 125°C
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 2, Transfer Characteristics
100
IDMax
10
Rds(on)
PD Max
TJ = 125°C
TC = 75°C
11
10
100 180
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 4, Forward Safe Operating Area
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