ZVN0545G Просмотр технического описания (PDF) - Diodes Incorporated.
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ZVN0545G Datasheet PDF : 4 Pages
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Characteristic
VGS = 10V
TA = +25°C
Symbol
VDSS
VGSS
ID
IDM
Value
450
20
140
ZVN0545G
Unit
V
V
mA
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation
Operating and Storage Temperature Range
TA = +25°C
Symbol
PD
TJ, TSTG
Value
2
-55 to +150
Unit
W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
450
V
IDSS
10
µA
400
µA
Gate-Source Leakage
ON CHARACTERISTICS
IGSS
±20
nA
Gate Threshold Voltage
VGS(TH)
1
Static Drain-Source On-State Resistance (Note 5) RDS(ON)
On-State Drain Current (Note 5)
ID(ON)
150
Forward Transconductance (Notes 5 and 6)
gfs
100
DYNAMIC CHARACTERISTICS (Note 6)
3
V
50
Ω
mA
mS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 7)
Turn-On Rise Time (Note 7)
Turn-Off Delay Time (Note 7)
Turn-Off Fall Time (Note 7)
Ciss
Coss
Crss
tD(ON)
tR
tD(OFF)
tF
70
pF
10
pF
4
pF
7
ns
7
ns
16
ns
10
ns
Notes:
5. Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%.
6. Sample test.
7. Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator.
Test Condition
VGS = 0V, ID =1mA
VDS = 450V, VGS = 0V
VDS=405V, VGS=0V, T=+125°C (Note 6)
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 1mA
VGS = 10V, ID = 100mA
VDS =25V, VGS =10V
VDS =25V,ID =100mA
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 25V, ID=100mA
ZVN0545G
Document Number DS33345 Rev. 4 - 2
2 of 4
www.diodes.com
February 2015
© Diodes Incorporated
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