ZXMN2A02N8TC Просмотр технического описания (PDF) - Zetex => Diodes

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ZXMN2A02N8TC

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMN2A02N8

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Drain-Source Voltage

Gate Source Voltage

Continuous

Drain

C

urrent

VGS=10V;

VGS=10V;

VGS=10V;

TA=25°C

TA=70°C

TA=25°C

(b)

(b)

(a)

Pulsed Drain Current (c)

Continuous Source Current (Body Diode) (b)

Pulsed Source Current (Body Diode) (c)

Power Dissipation at TA=25°C (a)

Linear Derating Factor

Power Dissipation at TA=25°C (b)

Linear Derating Factor

Operating and Storage Temperature Range

SYMBOL

VDSS

VGS

ID

IDM

IS

ISM

PD

PD

Tj:Tstg

LIMIT

20

12

10.2

8.2

8.3

50

4.3

50

1.56

12.5

2.5

20

-55 to 150

UNIT

V

V

A

A

A

A

W

mW/°C

W

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient (a)

Junction to Ambient (b)

RθJA

RθJA

80

°C/W

50

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface mounted on FR4 PCB measured at tр10 secs.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300␮s - pulse width limited by maximum junction temperature.

SEMICONDUCTORS

ISSUE 6 - FEBRUARY 2007

2

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