ZXMN2A03E6 Просмотр технического описания (PDF) - Diodes Incorporated.

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производитель

ZXMN2A03E6

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated. 

ZXMN2A03E6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Gate Source Voltage

Continuous Drain Current VGS=10V; TA=25°C (b)

VGS=10V; TA=70°C (b)

VGS=10V; TA=25°C (a)

Pulsed Drain Current (c)

Continuous Source Current (Body Diode) (b)

Pulsed Source Current (Body Diode) (c)

Power Dissipation at TA=25°C (a)

Linear Derating Factor

Power Dissipation at TA=25°C (b)

Linear Derating Factor

Operating and Storage Temperature Range

SYMBOL

VDSS

VGS

ID

IDM

IS

ISM

PD

PD

Tj:Tstg

LIMIT

20

12

4.6

3.7

3.7

16

2.7

16

1.1

8.8

1.7

13.6

-55 to +150

UNIT

V

V

A

A

A

A

W

mW/°C

W

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient (a)

RθJA

113

°C/W

Junction to Ambient (b)

RθJA

70

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface mounted on FR4 PCB measured at tр5 secs.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10␮s - pulse width limited by maximum junction temperature. Refer to

Transient Thermal Impedance graph. Refer to transient thermal impedance graph.

ISSUE 4 - SEPTEMBER 2005

2

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