PHE13009,127(2018) Просмотр технического описания (PDF) - Unspecified
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PHE13009,127 Datasheet PDF : 8 Pages
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WeEn Semiconductors
Silicon Diffused Power Transistor
Product data sheet
PHE13009
IC/A
14
12
10
8
6
-5V
4
-3V
2
-1V
0
0
100
200
300 400 500 600
VCEclamp/V
700
800
900
Fig.13. Reverse bias safe operating area (Tj < Tjmax)
for -Vbe = 5V,3V and 1V.
VCC
LC
IBon
LB
VCL(RBSOAR)
PROBE POINT
-VBB
T.U.T.
Fig.14. Test circuit for reverse bias safe operating
area.
Vclamp < 700V; Vcc = 150V; -Vbe = 5V,3V & 1V;
LB = 1µH; LC = 200µH
March 2018
5
Rev 1.100
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