2SA2010 Просмотр технического описания (PDF) - Panasonic Corporation
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2SA2010 Datasheet PDF : 3 Pages
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2010
Silicon PNP epitaxial planar type
For DC-DC converter
For various driver circuits
0.40+–00..0150
Unit: mm
0.16+–00..0160
3
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• High-speed switching
• Mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing.
/ ■ Absolute Maximum Ratings Ta = 25°C
1
2
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
e Parameter
Symbol Rating
Unit
c type) Collector-base voltage (Emitter open) VCBO
−15
V
n d ge. ed Collector-emitter voltage (Base open) VCEO
−15
V
sta tinu Emitter-base voltage (Collector open) VEBO
−5
V
a e cycle iscon Collector current
IC
−2.5
A
life d, d Peak collector current
ICP
−10
A
n u duct type Collector power dissipation *
PC
600
mW
te tin Pro ued Junction temperature
Tj
150
°C
four ntin Storage temperature
Tstg −55 to +150 °C
wing disco Note) *: Measure on the ceramic substrate at 15 mm × 15 mm × 0.6 mm
Marking Symbol: AS
1: Base
2: Emitter
3: Collector
Mini3-G1 Package
ain onludes foell,oplaned ■ Electrical Characteristics Ta = 25°C ± 3°C
inc typ Parameter
Symbol
Conditions
Min
c tinued ance Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0
−15
M is con inten Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0
−15
/Dis , ma Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
−5
D ance type Collector-base cutoff current (Emitter open) ICBO VCB = −10 V, IE = 0
inten nce Forward current transfer ratio *
hFE1 VCE = −2 V, IC = −100 mA
200
Ma tena hFE2 VCE = −2 V, IC = −2.5 A
100
ain Collector-emitter saturation voltage * VCE(sat) IC = −1 A, IB = −10 mA
ed m IC = −2.5 A, IB = −50 mA
(plan Transition frequency
fT
VCB = −10 V, IE = 50 mA, f = 200 MHz
Typ Max
− 0.1
560
−140
−270
180
−320
Unit
V
V
V
µA
mV
MHz
Collector output capacitance
Cob VCB = −10 V, IE = 0, f = 1 MHz
40
pF
(Common base, input open circuited)
Turn-on time
ton Refer to the measurement circuit
35
ns
Turn-off time
toff
10
ns
Storage time
tstg
110
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: September 2007
SJC00040DED
1
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