MUN5211DW1T1G_05 Просмотр технического описания (PDF) - ON Semiconductor

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производитель

MUN5211DW1T1G_05

Dual Bias Resistor Transistors

ON Semiconductor 

MUN5211DW1T1 Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)

Characteristic

Symbol

Min

Typ

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0)

Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)

Emitter-Base Cutoff Current

(VEB = 6.0 V, IC = 0)

MUN5211DW1T1, G

MUN5212DW1T1, G

MUN5213DW1T1, G

MUN5214DW1T1, G

MUN5215DW1T1, G

MUN5216DW1T1, G

MUN5230DW1T1, G

MUN5231DW1T1, G

MUN5232DW1T1, G

MUN5233DW1T1, G

MUN5234DW1T1, G

MUN5235DW1T1, G

MUN5236DW1T1, G

MUN5237DW1T1, G

ICBO

−

−

ICEO

−

−

IEBO

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)

Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0)

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

ON CHARACTERISTICS (Note 4)

DC Current Gain

(VCE = 10 V, IC = 5.0 mA)

MUN5211DW1T1, G

MUN5212DW1T1, G

MUN5213DW1T1, G

MUN5214DW1T1, G

MUN5215DW1T1, G

MUN5216DW1T1, G

MUN5230DW1T1, G

MUN5231DW1T1, G

MUN5232DW1T1, G

MUN5233DW1T1, G

MUN5234DW1T1, G

MUN5235DW1T1, G

MUN5236DW1T1, G

MUN5237DW1T1, G

V(BR)CBO

50

−

V(BR)CEO

50

−

hFE

35

60

60

100

80

140

80

140

160

350

160

350

3.0

5.0

8.0

15

15

30

80

200

80

150

80

140

80

150

80

140

Max

Unit

100

nAdc

500

nAdc

0.5

mAdc

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

0.13

0.2

0.05

0.13

−

Vdc

−

Vdc

−

−

−

−

−

−

−

−

−

−

−

−

−

−

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