BAT74S Просмотр технического описания (PDF) - NXP Semiconductors.
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BAT74S Datasheet PDF : 11 Pages
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NXP Semiconductors
BAT74S
Dual Schottky barrier diode
10
Cd
(pF)
8
006aac891
6
4
2
Fig. 4.
0
0
Tamb = 25 °C; f = 1 MHz
10
20
30
VR (V)
Diode capacitance as a function of reverse voltage; typical values
8. Test information
RS = 50 Ω
V = VR + IF × RS
(1) IR = 1 mA
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
Ri = 50 Ω
VR
mga881
tr
tp
10 %
90 %
input signal
Fig. 5. Reverse recovery time test circuit and waveforms
t
+ IF
trr
t
(1)
output signal
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BAT74S
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 November 2012
© NXP B.V. 2012. All rights reserved
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