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STS6DNF30V

DUAL N-CHANNEL 30V - 0.026Ω - 6A SO-8 2.5V-DRIVE STripFET™ II POWER MOSFET

STMicroelectronics 

STS6DNF30V

THERMAL DATA

Rthj-amb Thermal Resistance Junction-ambient Max Single Operation

Thermal Resistance Junction-ambient Max Dual Operation

Tj

Max. Operating Junction Temperature

Tstg

Storage Temperature

78

62.5

150

–65 to 150

°C/W

°C/W

°C

°C

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

30

V

Breakdown Voltage

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

µA

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ±12V

±100

nA

ON (1)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS, ID = 250µA

VGS = 4.5 V, ID = 3 A

VGS = 2.5 V, ID = 3 A

Min.

0.6

Typ. Max.

0.026

0.030

0.030

0.038

Unit

V

Ω

Ω

DYNAMIC

Symbol

gfs (1)

Parameter

Forward Transconductance

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS > ID(on) x RDS(on)max,

ID = 3 A

VDS = 25 V, f = 1 MHz, VGS = 0

Min.

Typ.

15

800

180

32

Max.

Unit

S

pF

pF

pF

2/8

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