FDPF8N60ZUT Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
производитель
FDPF8N60ZUT Datasheet PDF : 8 Pages
| |||
FDPF8N60ZUT
N-Channel UniFETTM II Ultra FRFETTM MOSFET
600 V, 6.5 A, 1.35 Ω
November 2013
Features
• RDS(on) = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 3.25 A
• Low Gate Charge (Typ. 20 nC)
• Low Crss (Typ. 10 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. UniFET II Ultra FRFETTM MOSFET has much superior
body diode reverse recovery performance. Its trr is less than
50nsec and the reverse dv/dt immunity is 20V/nsec while nor-
mal planar MOSFETs have over 200nsec and 4.5V/nsec
respectively. Therefore UniFET II Ultra FRFET MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of
the MOSFET’s body diode. This device family is suitable for
switching power converter applications such as power factor
correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
D
GDS
G
TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2012 Fairchild Semiconductor Corporation
1
FDPF8N60ZUT Rev. C2
S
FDPF8N60ZUT
600
±30
6.5*
3.9*
26*
420
6.5
13.5
20
34.5
0.28
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FDPF8N60ZUT
3.6
62.5
Unit
oC/W
www.fairchildsemi.com
Share Link: 