10MQ040N Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
10MQ040N Datasheet PDF : 5 Pages
| |||
10MQ040NPbF
Vishay High Power Products Schottky Rectifier, 2.1 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM (1)
Threshold voltage
Forward slope resistance
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
VF(TO)
rt
CT
LS
dV/dt
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
1A
1.5 A
1A
1.5 A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
TJ = TJ maximum
VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.54
0.62
0.49
0.56
0.5
26
0.36
104
38
2.0
10 000
UNITS
V
mA
V
mΩ
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
Approximate weight
Marking device
Case style SMA (similar D-64)
Note
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
VALUES
- 55 to 150
UNITS
°C
80
°C/W
0.07
g
0.002
oz.
V1F
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94117
Revision: 16-Apr-08
Share Link: 