2N7002 Просмотр технического описания (PDF) - Silicon Standard Corp.
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2N7002 Datasheet PDF : 3 Pages
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2N7002
N-CHANNEL MOSFET
PRODUCT SUMMARY
SOT-23 Plastic-Encapsulate Transistors
FEATURES
High density cell design for low RDS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
Pb-free; RoHS-compliant
MARKING: 7002
MAXIMUM RATINGS (TA=25 oC unless otherwise noted)
Symbol
VDS
ID
PD
TJ
Tstg
Parameter
Drain-Source voltage
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
60
115
225
150
-55-150
Units
V
mA
mW
℃
℃
SOT-23
1. GATE
2. SOURCE
3. DRAIN
08/04/2007 Rev.1.00
www.SiliconStandard.com
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