A1060 Просмотр технического описания (PDF) - Inchange Semiconductor
Номер в каталоге
Компоненты Описание
производитель
A1060 Datasheet PDF : 3 Pages
| |||
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-3A ;IB=B -0.3A
VBE
Base-emitter on voltage
IC=-3A;VCE=-5V
ICBO
Collector cut-off current
VCB=-80V; IE=0
IEBO
Emitter cut-off current
VEB=-3V; IC=0
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
hFE-2
DC current gain
IC=-1A ; VCE=-5V
hFE-3
DC current gain
IC=-3A ; VCE=-5V
fT
Transition frequency
IC=-0.5A ; VCE=-5V
hFE-2 Classifications
R
Q
P
40-80 60-120 100-200
Product Specification
2SA1060
MIN TYP. MAX UNIT
-80
V
-2.0
V
-1.8
V
-50 μA
-50 μA
20
40
200
20
20
MHz
2
Share Link: 