2SA1943 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SA1943 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
2SA1943
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage \c- -50mA ; IB= 0
-230
V
VcE(sat) Collector-Emitter Saturation Voltage IC=-8.0A;IB=-0.8A
-3.0
V
VeE(on)
Base-Emitter On Voltage
ICBO
Collector Cutoff Current
lc= -7A ; VCE= -5V
VCB= -230V ; IE= 0
-1.5
V
-5
uA
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
-5
uA
hpE-1
DC Current Gain
lc=-1A;VCE=-5V
55
160
hpE-2
DC Current Gain
lc=-7A;VCE=-5V
35
COB
Output Capacitance
IE=0 ; VCB= -1 OV;f= 1.0MHz
360
pF
fr
Current-Gain—Bandwidth Product
lc=-1A;VCE=-5V
30
MHz
• hpE-1 Classifications
R:55-95
R55
R60
R65
R70
R75
R80
R85
R90
55-60 60-65
O:95-160
095
O100
65-70
O105
70-75
0110
75-80
O115
80-85
O120
85-90
O125
90-95
95-100 100-105 105-110 110-115 115-120 120-125 125-130
O130
O135
0140
0145
O1 50
O155
130-135 135-140 140-145 145-150 150-155 155-160
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