2SC3356S Просмотр технического описания (PDF) - Secos Corporation.
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2SC3356S Datasheet PDF : 3 Pages
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Elektronische Bauelemente
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
200
100
0
50
100
150
TA-Ambient Temperature-°C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
50
20
10
0.5 1
5 10
50
IC-Collector Current-mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
VCE = 10 V
0.1
0 0.5 1.0
5.0 10 30
IC-Collector Current-mA
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
2SC3356
NPN Silicon
Plastic-Encapsulate Transistor
2SC3356
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
2
f = 1.0 MHz
1
0.5
0.3
0
0.5 1 2
5 10 20 30
VCB-Collector to Base Voltage-V
INSERTION GAIN vs.
COLLECTOR CURRENT
15
10
5
VCE = 10 V
f = 1.0 GHz
0
0.5 1
5 10
IC-Collector Current-mA
50 70
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
Gmax
20
|S21e|2
10
VCE = 10 V
IC = 20 mA
0
0.1 0.2 0.4 0.6 0.81.0 2
f-Frequency-GHz
Any changing of specification will not be informed individual
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