D600 Просмотр технического описания (PDF) - SavantIC Semiconductor
Номер в каталоге
Компоненты Описание
производитель
D600 Datasheet PDF : 4 Pages
| |||
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SD600
2SD600K
IC=1mA; RBE==
V(BR)CBO
Collector-base
breakdown voltage
2SD600
2SD600K
IC=10µA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=10µA ;IC=0
VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50mA
VBEsat
Base-emitter saturation voltage
IC=0.5A ;IB=50mA
ICBO
Collector cut-off current
VCB=50V; IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=50mA ; VCE=5V
hFE-2
DC current gain
IC=0.5A ; VCE=5V
fT
Transition frequency
IC=50mA ; VCE=10V
COB
Collector output capacitance
f=1MHz ; VCB=10V
Switching times
tf
Fall time
toff
Turn-off time
tstg
Storage time
IC=500mA ; VCE=12V
IB1=-IB2=50mA
hFE-1 Classifications
D
E
F
60-120 100-200 160-320
Product Specification
2SD600 2SD600K
MIN TYP. MAX UNIT
100
V
120
100
V
120
5
V
0.4
V
1.2
V
1
µA
1
µA
60
320
20
130
MHz
20
pF
0.1
µs
0.5
µs
0.7
µs
2
Share Link: 