BAS21 Просмотр технического описания (PDF) - General Semiconductor

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BAS21

Small Signal Diodes

General Semiconductor 

BAS19, BAS20, BAS21

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

Unit

Forward Voltage

at IF = 100 mA

at IF = 200 mA

Leakage Current

at VR = VRmax

at VR = VRmax; Tj = 150 °C

Dynamic Forward Resistance

at IF = 10 mA

Capacitance

at VR = 0, f = 1 MHz

VF

–

–

1.0

V

VF

–

–

1.25

V

IR

–

–

100

nA

IR

–

–

100

µA

rf

–

5

–

Ω

Ctot

–

–

5

pF

Reverse Recovery Time (see figures)

trr

from IF = 30 mA through IR = 30 mA to IR = 3 mA,

RL = 100 Ω

–

–

50

ns

Thermal Resistance Junction to Ambient Air

RthJA

–

–

4302)

K/W

2) Device on fiberglass substrate, see layout.

.30 (7.5)

.12 (3)

.59 (15)

.03 (0.8)

.47 (12)

0.2 (5)

.04 (1) .08 (2)

.04 (1)

.08 (2)

.06 (1.5)

.20 (5.1)

Dimensions in inches (millimeters)

Layout for RthJA test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

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