BAT85 Просмотр технического описания (PDF) - NXP Semiconductors.
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BAT85 Datasheet PDF : 9 Pages
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NXP Semiconductors
BAT85
Schottky barrier single diode
12
Cd
(pF)
8
mgc681
4
0
0
10
20 VR (V) 30
f = 1 MHz.
Fig. 3. Diode capacitance as a function of reverse
voltage; typical values
250
IF(AV)
(mA)
200
mra540
150
100
50
0
0
50
100
150
Tamb (°C)
Fig. 4. Average forward current as a function of
ambient temperature; typical values
8. Test information
RS = 50 Ω
V = VR + IF × RS
D.U.T.
IF
tr
tp
10 %
SAMPLING
OSCILLOSCOPE
Ri = 50 Ω
VR
90 %
mga881
input signal
(1) IR = 1 mA
Fig. 5. Reverse recovery time test circuit and waveforms
t
+ IF
trr
t
(1)
output signal
BAT85
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 July 2012
© NXP B.V. 2012. All rights reserved
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