BC807 Просмотр технического описания (PDF) - General Semiconductor

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производитель

BC807

Small Signal Transistors (PNP)

General Semiconductor 

BC807, BC808

Small Signal Transistors (PNP)

Electrical Characteristics (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

DC Current Gain

Current Gain Group –16

–VCE = 1V, –IC = 100mA 100

—

250

—

– 25 hFE

160

—

400

—

– 40

250

—

600

—

–VCE = 1V, –IC = 500mA

40

—

—

—

Collector Saturation Voltage

–VCEsat –IC = 500mA, –IB = 50mA

—

—

0.7

V

Base Saturation Voltage

VBEsat –IC = 500mA, –IB = 50mA —

—

1.3

V

Base-Emitter Voltage

–VBEon –VCE = 1V, –IC = 500mA

—

—

1.2

V

Collector-Base Cutoff Current

–ICBO

–VCB = 20V

–VCB = 20V, TJ = 150°C

—

—

—

100

nA

—

5

µA

Emitter-Base Cutoff Current

–IEBO

–VEB = 4 V

—

—

100

nA

Gain-Bandwidth Product

fT

–VCE = 5V, –IC = 10mA

f = 50 MHz

—

100

—

MHz

Collector-Base Capacitance

CCBO

–VCB = 10V, f = 1 MHz

—

12

—

pF

Note: (1)Device on fiberglass substrate, see layout.

Layout for RθJA test

Thickness: Fiberglass 0.059 in. (1.5 mm)

Copper leads 0.012 in. (0.3 mm)

0.59 (15)

0.03 (0.8)

0.47 (12)

0.2 (5)

0.30 (7.5)

0.12 (3)

.04 (1) .08 (2)

.04 (1)

.08 (2)

Dimensions in inches (millimeters)

0.06 (1.5)

0.20 (5.1)

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