BC807(Old_V) Просмотр технического описания (PDF) - Unisonic Technologies

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Компоненты Описание

производитель

BC807
(Rev.:Old_V)

PNP EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

UTC BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR

PARAMETER

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

SYMBOL TEST CONDITIONS

hFE1 Ic=-100mA, VCE=-1V

hFE2 Ic=-300mA, VCE=-1V

VCE(sat) Ic=-500mA, IB=-50mA

VBE(on) Ic=-300mA, VCE=-1V

fT VCE=-5V, Ic=-10mA, f=50MHz

Cob VCB=-10V, f=1MHz

MIN

100

60

TYP MAX UNIT

630

-0.7 V

-1.2 V

100

MHz

12 pF

Classification of hFE

RANK

hFE1

hFE2

16

100-250

60-

25

160-400

100-

40

250-630

170-

Marking Code

TYPE

807-16

MARK

9FA

807-25

9FB

807-40

9FC

808-16

9GA

808-25

9GB

808-40

9GC

UTC UNISONIC TECHNOLOGIES CO. LTD 2

QW-R206-026,A

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