SBC807-40L Просмотр технического описания (PDF) - ON Semiconductor

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производитель

SBC807-40L

PNP Silicon General Purpose Transistors

ON Semiconductor 

BC807−16L, SBC807-16L BC807−25L, SBC807-25L, BC807−40L, SBC807−40L

TYPICAL CHARACTERISTICS − BC807−16LT1

500

400 150°C

300

25°C

200

−55°C

100

VCE = 1 V

1

IC/IB = 10

0.1

25°C

150°C

−55°C

0

0.001

0.01

0.1

1

IC, COLLECTOR CURRENT (A)

Figure 1. DC Current Gain vs. Collector

Current

1.1

1.0

IC/IB = 10

0.9

0.8

0.7

−55°C

25°C

150°C

0.6

0.5

0.4

0.3

0.2

0.0001 0.001

0.01

0.1

1

IC, COLLECTOR CURRENT (A)

Figure 3. Base Emitter Saturation Voltage vs.

Collector Current

0.01

0.001

0.01

0.1

1

IC, COLLECTOR CURRENT (A)

Figure 2. Collector Emitter Saturation Voltage

vs. Collector Current

1.2

1.1 VCE = 5 V

1.0

0.9

−55°C

0.8

25°C

0.7

0.6

0.5

150°C

0.4

0.3

0.2

0.0001 0.001

0.01

0.1

1

IC, COLLECTOR CURRENT (A)

Figure 4. Base Emitter Voltage vs. Collector

Current

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