BCW89 Просмотр технического описания (PDF) - NXP Semiconductors.
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BCW89 Datasheet PDF : 7 Pages
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NXP Semiconductors
PNP general purpose transistor
Product data sheet
BCW89
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
VCEsat
VBEsat
VBE
Cc
fT
F
collector cut-off current
IE = 0; VCB = −20 V
IE = 0; VCB = −20 V; Tj = 100 °C
emitter cut-off current
IC = 0; VEB = −5 V
DC current gain
IC = −10 μA; VCE = −5 V
IC = −2 mA; VCE = −5 V
collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA
IC = −50 mA; IB = −2.5 mA
base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA
IC = −50 mA; IB = −2.5 mA
base-emitter voltage
IC = −2 mA; VCE = −5 V
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz
noise figure
IC = −200 μA; VCE = −5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
−
−
−
−
120
−
−
−
−
−600
−
−
−
−
−
−
90
−
−80
−150
−720
−810
−
4.5
150
−
−100
−10
−100
−
260
−300
−
−
−
−750
−
−
10
nA
μA
nA
mV
mV
mV
mV
mV
pF
MHz
dB
1999 Apr 15
3
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