BD130 Просмотр технического описания (PDF) - Comset Semiconductors
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BD130 Datasheet PDF : 3 Pages
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NPN BD130
SILICON TRANSISTOR HOMOBASE
LF Large signal power amplification
High current switching
Regulated DC power supply
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VCEX
IC
IB
PT
TJ
TS
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
VBE=-1.5 V
@ TC = 45°
Value
60
100
100
15
7
100
-55 to +200
Unit
V
V
V
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
1.55
Unit
°C/W
15/11/2012
COMSET SEMICONDUCTORS
1|3
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