BDW55 Просмотр технического описания (PDF) - Inchange Semiconductor
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BDW55 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·Collector–Emitter Sustaining Voltage-
: VCEO(SUS)= 45V- BDW55
= 60V- BDW57
= 80V- BDW59
·Complement to Type BDW56/58/60
APPLICATIONS
·Designed for use in professional equipment such as
telecommunication and etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base
Voltage
BDW55
45
BDW57
60
BDW59
100
VCER
Collector-Emitter
Voltage RBE= 1kΩ
BDW55
45
BDW57
60
BDW59
100
VCEO
Collector-Emitter
Voltage
BDW55
45
BDW57
60
BDW59
80
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
1
ICM
Collector Current-Peak
1.5
Collector Power Dissipation
PC
@ TC=25℃
8
TJ
Junction Temperature
175
Tstg
Storage Temperature Range
-65~175
UNIT
V
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX UNIT
10 ℃/W
100 ℃/W
isc Product Specification
BDW55/57/59
isc Website：www.iscsemi.cn
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