BDX18 Просмотр технического описания (PDF) - Unspecified

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Компоненты Описание

производитель

BDX18

PNP SILICON TRANSISTOR EPITAXIAL BASE

Unspecified 

BDX18 – BDX18N

Symbol

Ratings

h21E

Static Forward Current

Transfer Ratio (*)

Test Condition(s)

Min Typ Mx Unit

VCE=-4.0 V, IC=-4.0 A

BDX18

BDX18N

20 - 70 -

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

(1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit

MECHANICAL DATA CASE TO-3

DIMENSIONS

mm

inches

A

25,51 1,004

B

38,93

1,53

C

30,12

1,18

D

17,25

0,68

E

10,89

0,43

G

11,62

0,46

H

8,54

0,34

L

1,55

0,6

M

19,47

0,77

N

1

0,04

P

4,06

0,16

Pin 1 :

Pin 2 :

Case :

Base

Emitter

Collector

COMSET SEMICONDUCTORS

3/3

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