BSP52 Просмотр технического описания (PDF) - Philips Electronics
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BSP52 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN Darlington transistors
Product specification
BSP50; BSP51; BSP52
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
APPLICATIONS
• Industrial high gain amplification.
DESCRIPTION
NPN Darlington transistor in a SOT223 plastic package.
PNP complements: BSP60, BSP61 and BSP62.
PINNING
PIN
1
2,4
3
base
collector
emitter
DESCRIPTION
4
2, 4
1
1
2
3
Top view
MAM265
3
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCES
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
BSP50
BSP51
BSP52
collector-emitter voltage
BSP50
BSP51
BSP52
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
MIN.
open emitter
−
−
−
VBE = 0
−
−
−
open collector
−
−
−
−
Tamb ≤ 25 °C; note 1 −
−65
−
−65
MAX.
UNIT
60
V
80
V
90
V
45
V
60
V
80
V
5
V
1
A
2
A
100
mA
1.25
W
+150
°C
150
°C
+150
°C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
1999 Apr 23
2
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