BSS123LT1G, BVSS123LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0, ID = 250 mAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 100 Vdc) TJ = 25°C
TJ = 125°C
Gate−Body Leakage Current
(VGS = 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain−Source On−Resistance
(VGS = 10 Vdc, ID = 100 mAdc)
Forward Transconductance
(VDS = 25 Vdc, ID = 100 mAdc)
DYNAMIC CHARACTERISTICS
V(BR)DSS 100
−
IDSS
IGSS
−
−
−
−
−
−
−
Vdc
mAdc
15
60
50 nAdc
VGS(th)
1.6
−
2.6 Vdc
rDS(on)
−
−
6.0
W
gfs
80
−
− mmhos
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS(4)
Ciss
Coss
Crss
−
20
−
pF
−
9.0
−
pF
−
4.0
−
pF
Turn−On Delay Time
Turn−Off Delay Time
REVERSE DIODE
(VCC = 30 Vdc, IC = 0.28 Adc,
VGS = 10 Vdc, RGS = 50 W)
td(on)
td(off)
−
20
−
ns
−
40
−
ns
Diode Forward On−Voltage
(ID = 0.34 Adc, VGS = 0 Vdc)
VSD
−
−
1.3
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device
Package
Shipping†
BSS123LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
BSS123LT3G
SOT−23
(Pb−Free)
10000 / Tape & Reel
BVSS123LT1G*
SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
http://onsemi.com
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