BSS123LT7G(2019) Просмотр технического описания (PDF) - ON Semiconductor
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BSS123LT7G Datasheet PDF : 5 Pages
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BSS123LT1G, BVSS123LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
1
0 V ≤ VGS ≤ 20 V
SINGLE PULSE
TA = 25°C
TJ = 150°C
0.1
100 ms
1 ms
10 ms
100 ms
0.01
0.001
0.1
RDS(on) LIMIT
THERMAL LIMIT
dc
PACKAGE LIMIT
1
10
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Maximum Rated Forward Biased
Safe Operating Area
1000
100
10
D = 0.5
0.2
0.1
0.05
0.02
0.01
1
Single Pulse
0.1
0.000001 0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
Figure 8. Thermal Response
1 oz. Cu Pad, 5mm thick, 25mm2 area
1
10
100
1000
www.onsemi.com
4
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