BUK108-50DL Просмотр технического описания (PDF) - NXP Semiconductors.
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производитель
BUK108-50DL Datasheet PDF : 10 Pages
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Philips Semiconductors
PowerMOS transistor
Logic level TOPFET
Idss
1 mA
100 uA
10 uA
typ.
1 uA
100 nA
0
20
40
60
80 100 120 140
Tj / C
Fig.20. Typical off-state leakage current.
IDSS = f(Tj); Conditions: VDS = 40 V; IIS = 0 V.
Product specification
BUK108-50DL
Iiso & Iisl normalised to 25 C
1.5
1
0.5
-60
-20
20
60
100
140
180
Tj / C
Fig.21. Normalised input currents (normal & latched).
IISO/IISO25˚C & IISL/IISL25˚C = f(Tj); VIS = 5 V
June 1996
8
Rev 1.000
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