BUL770 Просмотр технического описания (PDF) - Bourns, Inc

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производитель

BUL770

NPN SILICON POWER TRANSISTOR

Bourns, Inc 

BUL770

NPN SILICON POWER TRANSISTOR

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-emitter

VCEO(sus) sustaining voltage

IC = 100 mA

ICES

IEBO

Collector-emitter

cut-off current

Emitter cut-off

current

VCE = 700 V

VCE = 700 V

VEB = 9 V

VBE(sat)

VCE(sat)

hFE

VFCB

Base-emitter

saturation voltage

Collector-emitter

saturation voltage

Forward current

transfer ratio

Collector-base forward

bias diode voltage

IB = 160 mA

IB = 160 mA

IB = 160 mA

IB = 160 mA

VCE = 1 V

VCE = 1 V

VCE = 5 V

ICB = 60 mA

L = 25 mH

VBE = 0

VBE = 0

IC = 0

IC = 800 mA

IC = 800 mA

IC = 800 mA

IC = 800 mA

IC = 10 mA

IC = 800 mA

IC = 3.2 A

(see Note 3)

400

V

TC = 90°C

10

µA

200

1

mA

(see Notes 4 and 5)

TC = 90°C

0.83 0.9

V

0.75

(see Notes 4 and 5)

TC = 90°C

0.18 0.25

V

0.22

10 18.5

7 14.5 21

2

7.5 14

870

mV

NOTES: 3. Inductive loop switching measurement.

4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located

within 3.2 mm from the device body.

thermal characteristics

RθJA

RθJC

PARAMETER

Junction to free air thermal resistance

Junction to case thermal resistance

MIN TYP MAX UNIT

62.5 °C/W

2.5 °C/W

inductive-load switching characteristics at 25°C case temperature

PARAMETER

tsv

Storage time

tfi

Current fall time

txo

Cross over time

tsv

Storage time

tfi

Current fall time

IC = 800 mA

L = 1 mH

IC = 800 mA

L = 1 mH

TEST CONDITIONS

IB(on) = 160 mA

IB(off) = 320 mA

IB(on) = 160 mA

IB(off) = 100 mA

VCC = 40 V

VCLAMP = 300 V

VCC = 40 V

VCLAMP = 300 V

MIN TYP MAX UNIT

2.5

3

µs

150 190

ns

300 400

ns

4.3

5

µs

140 200

ns

resistive-load switching characteristics at 25°C case temperature

PARAMETER

tsv

Storage time

tfi

Current fall time

IC = 800 mA

VCC = 300 V

TEST CONDITIONS

IB(on) = 160 mA

IB(off) = 160 mA

MIN TYP MAX UNIT

2.5 3.4

µs

150 250

ns

PRODUCT INFORMATION

2

JULY 1991 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

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