BUT11 Просмотр технического описания (PDF) - Bourns, Inc

Номер в каталоге

Компоненты Описание

производитель

BUT11

NPN SILICON POWER TRANSISTOR

Bourns, Inc 

BUT11

NPN SILICON POWER TRANSISTOR

● Rugged Triple-Diffused Planar Construction

● 100 W at 25°C Case Temperature

● 5 A Continuous Collector Current

TO-220 PACKAGE

(TOP VIEW)

B

1

C

2

E

3

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

Collector-base voltage (IE = 0)

Collector-emitter voltage (VBE = 0)

Collector-emitter voltage (IB = 0)

Emitter-base voltage

Continuous collector current

Peak collector current (see Note 1)

Continuous device dissipation at (or below) 25°C case temperature

Operating junction temperature range

Storage temperature range

NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.

SYMBOL

VCBO

VCES

VCEO

VEBO

IC

ICM

Ptot

Tj

Tstg

VALUE

850

850

400

10

5

10

100

-65 to +150

-65 to +150

UNIT

V

V

V

V

A

A

W

°C

°C

PRODUCT INFORMATION

MAY 1989 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

1

Share Link: