BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
100
VCE = 5 V
TCP765AA
TC = 125°C
TC = 25°C
TC = -65°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
5·0
IC = 5 A
IC = 10 A
IC = 15 A
4·0
TC = 25°C
BASE CURRENT
TCP765AB
3·0
10
2·0
OBSOLETE 1·0
1·0
0
0·1
1·0
10 20
0·1
1·0
10
IC - Collector Current - A
IB - Base Current - A
Figure 5.
Figure 6.
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
5·0
IC = 5 A
BASE CURRENT
TCP765AI
IC = 10 A
BASE-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCP765AC
1·6
1·5
IC = 15 A
4·0
TC = 100°C
IC = 15 A
1·4
3·0
1·3
IC = 10 A
1·2
2·0
1·1
1·0
1·0
IC = 5 A
0·9
0
0·1
1·0
10
IB - Base Current - A
Figure 7.
PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
0·8
0
1
2
3
4
5
6
IB - Base Current - A
Figure 8.
5