LESHAN RADIO COMPANY, LTD.
Digital transistors (built-in resistors)
• Features
1) Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors (see equiva-
lent circuit).
2) The bias resistors consist of thinfilm resistors with complete
isolation to allow positive biasing of the input. They also have
the advantage of almost completely eliminating parasitic
effects.
3) Only the on/ off conditions need to be set for operation, mak-
ing device design easy.
• Structure
PNP digital transistor (Built-in resistors type)
•Equivalent circuit
2.9 + 0.2
1.9+ 0.2
0.95+ 0.95
(1)
(2)
R1
IN
R2
OUT
GND(+)
(3)
0.4
+
-
0.1
0.05
DTA114YKA
1.1
+
-
0.2
0.1
0.8 + 0.1
0 ~ 0.1
0.15
+
-
0.1
0.06
(1) GND
(2) IN
(3) OUT
IN
OUT
GND(+)
All terminals have same dimensions
EIAJ: SC— 59
• Absolute maximum ratings(Ta=25 °C)
Parameter
symbol
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
V cc
V IN
IO
I C(Max.)
Pd
Tj
T stg
• Elecrical characteristics(Ta=25°C)
Parameter
symbol
Input voltage
V I(off)
V I(on)
Output Voltage
V O(on)
Input current
II
Output current
I O(off)
DC current gain
GI
Input resistance
R1
Resistance ratio
R 2/ R 1
Transition frequency
fT
*Transition frequency of the device
Min.
—
–1.4
—
—
—
68
7
3.7
—
limits
unit
–50
V
–40~+6
V
–70
mA
–100
200
mW
150
°C
–55~+150
°C
Typ.
—
—
–0.1
—
—
—
10
4.7
250
Max.
–0.3
—
–0.3
–0.88
–0.5
—
13
5.7
—
Unit
V
V
mA
µA
—
KΩ
—
MHz
Conditions
VCC= – 5V,IO= –100µA
VO= – 0.3V,IO=–1mA
IO/II=–5mA/–0.25mA
VI= – 5V
VCC=– 50V,VI= 0 V
VO= – 5V,IO=– 5mA
—
—
VCE= –10V,IE= 5 mA,f=100MHz*
P4–1/2