DTC113ZUA Просмотр технического описания (PDF) - Willas Electronic Corp.

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производитель

DTC113ZUA

NPN Digital Transistor

Willas Electronic Corp. 

WILLAS

FM120-M

DTC113ZUA THRU

1.0NA PSUNRFDACiEgMitOaUlNTT rSaCnHOsTiTsKtYoBrARRIER RECTIFIERS -20V- 200V

FM1200-M

SOD-123+ PACKAGE

Pb Free Produ

Features

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

optimize board space.

• Low power loss, high efficiency.

Features• High current capability, low forward voltage drop.

•

Pb-Fre•eHpiaghcksuarggee cisapaavbailiitlya.ble

• Guardring for overvoltage protection.

RoHS p•rUodltruachtifgohr-sppaecekdinsgwictcohdineg.suffix ”G”

Haloge•nSfrileiceonpreopdituacxitafloprlapnaacrkcihnigp, cmoedtael ssiulifcfoixn“jHun”ction.

x Epitaxia•lLPelaadn-afrreDe piearCtsomnsetertuecntivoirnonmental standards of

x ComplemMeILn-tSarTyD-N19P5N00T/y2p2e8s Available

x Built-In•BRiaoHsiSngproRdeusctisfotor rpsacking code suffix "G"

• Epoxy mHeaelotsgeUn Lfre9e4prVod-0ucftlfaomr pmacakbiniglitcyodraetsinufgfix "H"

• MoisureMSeecnhsitaivnityicLaevledl a1 ta

x Markin•gE: pEo2x1y : UL94-V0 rated flame retardant

• Case : Molded plastic, SOD-123H

,

• Terminals :Plated terminals, solderable per MIL-STD-750

Absolute maximum rMaettihnogds2@02625к

Package outline

SOD-123H

0.146(3.7)

SOT-323 0.130(3.3)

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

0.031(0.8) Typ.

0.040(1.0)

0.024(0.6)

.010(0.25)

.003(0.08) 0.031(0.8) Typ.

Symbol

IC

VIN

Pd

Tj

Tstg

• Polarity : InPdaicraamteedtebry cathode band Min Typ Max Unit

Collector current

•InMpuotuvnotltianggePosition : Any

--- 100 ---

mA

-5

--- +10

V

Dimensions in inches.0a8n7d(2(m.2i0lli)meters)

.070(1.80)

•PWoweeirgdhitss: iApaptpiornoximated 0.011 gram --- 200 ---

mW

Junction temperature

--- 150 ---

ć

Storage tMemApXerIaMtuUreM RATINGS AND-5E5LEC-T--RICA15L0 CHAćRACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive of inductive load.

For capacitive load, derate current by 20%

Electrical CharacterRisAtTiIcNsGS@ 25к

SymMabrokling Code

Parameter

VMI(oaffx) imumInRpeuctuvrroeltnatgPee(aVkCRC=e5vVer,sIeO=V1o0lt0a­geA)

VMI(oan)ximum RMS Voltage(VO=0.3V, IO=20mA)

VOMI(Ioanx) imumOInDupCtuptBucltouvcrorkelitnnagtg(eVVo(I=IltOa5=gV1e)0mA,Ii=0.5mA)

IOM(oaff)ximumOAuvtepruatgceuFrroernwta(rVdCRC=e5c0tiVfie, dVCI=u0r)rent

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM.106506-(M1H.40F)M180-MH FM1100-MH FM1150-MH FM1200-M

Min Typ 12Max 13Unit 14

15

.10647(1.20) 18

10

115 120

0.3VRRM --- 20 --- 30 V

40

50

60

80

100

150

200

---VRMS --- 14 3.0 21 V

28

35

42

56

70

105

140

---

---

0.3

V

--- VDC --- 207.2 30mA 40

50

60

80

100

150

200

--- IO ---

0.5 ­A

.004(0.10)MAX1..0

GI

DC current gain (VO=5V, IO=5mA)

33 ---

RPe1 ak ForwIanrpduSt urergseisCtaunrrceent 8.3 ms single half sine-wave0.7 IFSM 1.0

R2s/uRp1erimpoRseedsiosntarnacteedrlaoatido (JEDEC method)

8

10

TfTypical ThT(VerraOmn=sa1ilt0iRoVen,sfIirsOe=taq5numceeAnc,(Nyf=o1te002M) Hz)

Typical Junction Capacitance (Note 1)

--- RΘJA250

CJ

Operating Temperature Range

TJ

---

1.3 K¡

12

--- MHz

-55 to +125

30

.016(0.40)

40 .008(0.20)

120

Dimensions in inches an-d55(mtoill+im15e0ters)

Storage Temperature Range

TSTG

- 65 to +175

Suggested Solder

CHARACTERISTICS

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MPHaFdM1L8a0-yMoHuFtM1100-MH FM1150-MH FM1200-M

Maximum Forward Voltage at 1.0A DC

VF

Maximum Average Reverse Current at @T A=25℃

IR

Rated DC Blocking Voltage

@T A=125℃

0.50

0.70 0.70

0.5

0.90 10

0.85

0.9

0.92

NOTES:

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

1.90 mm

0.65

0.65

2012-06

2012-0

WILLAS ELECTRONIC COR

WILLAS ELECTRONIC CORP.

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