FDH45N50F(RevA) Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDH45N50F Datasheet PDF : 7 Pages
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Package Marking and Ordering Information
Device Marking
FDH45N50F
Device
FDH45N50F
Package
TO-247
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
500
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
--
VDS = 400V, TC = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
3.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 22.5A
--
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 22.5A
(Note 4) --
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
--
f = 1.0MHz
--
--
VDS = 400V, VGS = 0V, f = 1.0MHz
--
VDS = 0V to 400V, VGS = 0V
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 250V, ID = 48A
RG = 25Ω
VDS = 400V, ID = 48A
VGS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
--
--
--
(Note 4, 5)
--
--
--
(Note 4, 5)
--
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0V, IS = 45A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 45A
dIF/dt =100A/µs
--
--
--
--
(Note 4)
--
Typ.
--
0.5
--
--
--
--
--
0.105
49.0
5100
790
62
161
342
140
500
215
245
105
33
45
--
--
--
188
0.64
Max Units
--
--
25
250
100
-100
V
V/°C
µA
µA
nA
nA
5.0
V
0.12 Ω
--
S
6630 pF
1030 pF
--
pF
--
pF
--
pF
290 ns
1010 ns
440 ns
500 ns
137 nC
--
nC
--
nC
45
A
180
A
1.4
V
--
ns
--
µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.46mH, IAS = 48A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 45A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
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FDH45N50F Rev. A
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