FDH45N50F(RevA) Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDH45N50F Datasheet PDF : 7 Pages
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Typical Performance Characteristics (Continued)
Figure 13. Typical Switching Losses vs.
Gate Resistance
1,000
800
Eoff
600
400
200
0
0
Eon
Notes :
1. VDS = 400 V
2. VGS = 12 V
3. ID = 25A
4. TJ = 125oC
5
10 15 20 25 30 35 40 45 50
RG, Gate resistance [Ω]
Figure 14. Unclamped Inductive Switching
Capability
100
Notes :
1. If R = 0 Ω
tAV = (L)(IAS)/(1.3 Rated BVDSS - VDD)
2. If R ≠ 0 Ω
tAV = (L/R)In[(IAS x R)/(1.3 Rated BVDSS - VDD)+1]
10
Starting TJ = 150oC
Starting TJ = 25oC
1
0.01
0.1
1
10
100
tAV, Time In Avalanche [ms]
Figure 15. Transient Thermal Resistance Curve
10-1 D=0.5
0.2
0.1
0.05
10-2
0.02
0.01
single pulse
Notes :
1. ZθJC(t) = 0.2 oC/W Max.
2. Duty Factor, D=t1/t2
3. T - T = P * Z (t)
JM
C
DM
θJC
PDM
t1
t2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square W ave Pulse Duration [sec]
5
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FDH45N50F Rev. A
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