IRFD9110PBF Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

IRFD9110PBF

Power MOSFET

Vishay Semiconductors 

IRFD9110, SiHFD9110

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

TA = 25 °C

TJ = 175 °C

SINGLE PULSE

Fig. 8 - Maximum Safe Operating Area

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Document Number: 91138

S10-2464-Rev. C, 25-Oct-10

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