IRFL9014PBF Просмотр технического описания (PDF) - International Rectifier
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IRFL9014PBF Datasheet PDF : 8 Pages
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IRFL9014PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Ciss
Coss
Crss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-60 ––– ––– V VGS = 0V, ID = 250µA
––– -0.059 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.50 Ω VGS = -10V, ID = 1.1A
-2.0 ––– -4.0 V VDS = VGS, ID = 250µA
1.3 ––– ––– S VDS = -25V, ID = 1.1A
––– ––– -100 µA VDS = -60V, VGS = 0V
––– ––– -500
VDS = -48V, VGS = 0V, TJ = 125°C
––– ––– -100 nA VGS = -20V
––– ––– 100
VGS = 20V
––– ––– 12
ID =-6.7A
––– ––– 3.8
––– ––– 5.1
nC VDS =-48V
VGS = -10V, See Fig. 6 and 13
––– 11 –––
VDD = -30V
––– 63 –––
––– 9.6 –––
ns ID = -6.7A
RG = 24 Ω
––– 31 –––
RD = 4.0 Ω, See Fig. 10
––– 4.0 –––
Between lead, 6mm(0.25in)
D
nH from package and center
G
––– 6.0 –––
of die contact.
S
––– 270 –––
––– 170 –––
VGS = 0V
pF VDS = 25V
––– 31 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
-1.8
-14
MOSFET symbol
showing the
A integral reverse
p-n junction diode.
D
G
S
––– ––– -5.5 V TJ = 25°C, IS = -1.8A, VGS = 0V
––– 80 160 ns TJ = 25°C, IF =-6.7A
––– 0.096 0.19 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD=-25V, starting TJ = 25°C, L =50 mH
RG = 25Ω, IAS = -1.8A. (See Figure 12)
2
ISD ≤ -6.7A, di/dt ≤90A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
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