IRFL9014(2014) Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
IRFL9014 Datasheet PDF : 8 Pages
| |||
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFL9014, SiHFL9014
Vishay Siliconix
VGS
Top -15 V
101
-10 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
Bottom -4.5 V
100
4.5 V
10-1
10-1
91195_01
20 µs Pulse Width
TC = 25 °C
100
101
- VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
2.5
ID = - 6.7 A
VGS = 10 V
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91195_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
101
100
10-1
VGS
Top -15 V
-10 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
Bottom -4.5 V
100
4.5 V
20 µs Pulse Width
TC = 150 °C
101
91195_02
- VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
600
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
500
Crss = Cgd
Coss = Cds + Cgd
400
300
Ciss
Coss
200
100
Crss
0
100
101
91195_05
- VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
101
25 °C
150 °C
100
20
ID = -6.7 A
16
12
VDS = -48 V
VDS = -30 V
10-1
4
91195_03
20 µs Pulse Width
VDS = - 25 V
5
6
7
8
9
10
- VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
8
4
0
0
91195_06
For test circuit
see figure 13
4
8
12
16
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S14-1686-Rev. F, 18-Aug-14
3
Document Number: 91195
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Share Link: 