IRFL9014(2014) Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

IRFL9014
(Rev.:2014)

Power MOSFET

Vishay Semiconductors 

www.vishay.com

IRFL9014, SiHFL9014

Vishay Siliconix

2.0

101

150 °C

25 °C

1.5

100

VGS = 0 V

10-1

1.0

2.0

3.0

4.0

5.0

6.0

91195_07

- VSD, Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

102

Operation in this area limited

5

by RDS(on)

2

10

100 µs

5

1 ms

2

1

10 ms

5

2

0.1 2

0.1

TC = 25 °C

TJ = 150 °C

Single Pulse

5

2

1

5

2

10

5

2

102

5

103

91195_08

- VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

1.0

0.5

0.0

25

50

75

100

125

150

91195_09

TC, Case Temperature (°C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

VDS

VGS

Rg

RD

D.U.T.

- 10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

-

+VDD

Fig. 10a - Switching Time Test Circuit

VGS

10 %

td(on) tr

td(off) tf

90 %

VDS

Fig. 10b - Switching Time Waveforms

102

0 − 0.5

10 0.2

0.1

0.05

1 0.02

0.01

0.1

Single Pulse

(Thermal Response)

10-2

10-5

10-4

10-3

10-2

0.1

1

PDM

Notes:

t1

t2

1. Duty Factor, D = t1/t2

2. Peak Tj = PDM x ZthJC + TC

10

102

103

91195_11

t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

S14-1686-Rev. F, 18-Aug-14

4

Document Number: 91195

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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