IRL3803 Просмотр технического описания (PDF) - Unspecified
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IRL3803 Datasheet PDF : 7 Pages
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IRL3803
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
––– ––– 0.006 Ω VGS = 10V, ID = 71A
––– ––– 0.009
VGS = 4.5V, ID = 59A
VGS(th)
Gate Threshold Voltage
1.0 ––– ––– V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
55 ––– ––– S VDS = 25V, ID = 71A
IDSS
Drain-to-Source Leakage Current
––– ––– 25 µA VDS = 30V, VGS = 0V
––– ––– 250
VDS = 24V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
Qg
Total Gate Charge
––– ––– 140
ID = 71A
Qgs
Gate-to-Source Charge
––– ––– 41 nC VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
––– ––– 78
VGS = 4.5V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
––– 14 –––
VDD = 15V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 230 –––
––– 29 –––
ns
ID = 71A
RG = 1.3Ω, VGS = 4.5V
––– 35 –––
RD = 0.20Ω, See Fig. 10
LD
Internal Drain Inductance
LS
Internal Source Inductance
––– 4.5 –––
––– 7.5 –––
Between lead,
6mm (0.25in.)
nH from package
and center of die contact
D
G
S
Ciss
Input Capacitance
––– 5000 –––
VGS = 0V
Coss
Output Capacitance
––– 1800 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 880 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 140
A showing the
––– ––– 470
integral reverse
p-n junction diode.
D
G
S
––– ––– 1.3 V TJ = 25°C, IS = 71A, VGS = 0V
––– 120 180 ns TJ = 25°C, IF = 71A
––– 450 680 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25°C, L = 180µH
RG = 25Ω, IAS = 71A. (See Figure 12)
ISD ≤ 71A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
2/8
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