DATA SHEET
SEMICONDUCTOR
KBPC8005 THRU KBPC810
TECHNICAL SPECIFICATIONS
OF SINGLE-PHASE SILICON
BRIDGE RECTIFIER
VOLTAGE RANGE-50 to1000 Volts
CURRENT-8.0 Amperes
FEATURES
•Surge overload rating: 125 Amperes peak
•Low forward voltage drop
•High temperature soldering : 260OC / 10 seconds at terminals
•Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
BR-10 Unit:inch(mm)
30 6
4
0
MECHANICAL DATA
•Case: Molded plastic
•Epoxy: UL 94V-0 rate flame retardant
•Lead: MIL-STD-202, Method 208 guaranteed
•Polarity: Symbols molded or marked on body
•Mounting position: Any
•Weight: 6.9 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
•Ratings at 25°C ambient temperature unless otherwise specified
•Single phase, half wave, 60Hz, resistive or inductive load.
•For capacitive load derate current by 20%
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
KBPC KBPC KBPC KBPC KBPC KBPC KBPC
SYMBOLS
UNIT
8005 801 802 804 806 808 810
VRRM
50
100 200 400 600 800 1000 Volts
VRMS
35
70
140 280 420 560 700 Volts
Maximum DC Blocking Voltage
VDC
50
100 200 400 600 800 1000 Volts
Maximum Average Forward Rectified Output
Current at TC = 50℃
Peak Forward Surge Current
8.3ms single half sine - wave superimposed on
rated load (JEDEC method )
IO
IFSM
8.0
Amps
125
Amps
Maximum Forward Voltage Drop per element at 4.0A DC
VF
1.1
Volts
Maximum DC Reverse Current at Rate
@TA = 25℃
IR
DC Blocking Voltage per element
@TC =100℃
5.0
μAmps
500
I2t Rating for Fusing(t<8.3ms)
I2t
166
A2Sec
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
CJ
RθJC
TJ
TSTG
200
21
-55 to +150
-55 to +150
pF
℃/W
℃
℃
NOTES: 1.Measured at 1 MHz and applied reverse voltage of 4.0 volts
2.Thermal Resistance from Junction to Ambient and from junction to lead mounted on P.C.B. with 0.5x0.5”(13x13mm)copper pads.
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1
REV.02 20120305